Vishay Isolated TrenchFET 2 Type P, Type N-Channel MOSFET, 8 A, 40 V Enhancement, 8-Pin SOIC SI4554DY-T1-GE3
- RS Stock No.:
- 787-9238
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD10.95
(exc. GST)
SGD11.94
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.095 | SGD10.95 |
| 20 - 40 | SGD1.041 | SGD10.41 |
| 50 - 90 | SGD0.989 | SGD9.89 |
| 100 - 190 | SGD0.94 | SGD9.40 |
| 200 + | SGD0.893 | SGD8.93 |
*price indicative
- RS Stock No.:
- 787-9238
- Mfr. Part No.:
- SI4554DY-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 34mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.2W | |
| Typical Gate Charge Qg @ Vgs | 13.3nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Isolated | |
| Height | 1.5mm | |
| Width | 4mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 34mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.2W | ||
Typical Gate Charge Qg @ Vgs 13.3nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Isolated | ||
Height 1.5mm | ||
Width 4mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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