Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

RS Stock No.:: 787-8995
Distrelec Article No.:: 304-02-278
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

Bulk discount available

Price Each (In a Pack of 10)**

SGD1.198

(exc. GST)

SGD1.306

(inc. GST)

150 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Pack**
10 - 20	SGD1.198	SGD11.98
30 - 40	SGD1.154	SGD11.54
50 +	SGD1.081	SGD10.81

**price indicative

RS Stock No.:: 787-8995
Distrelec Article No.:: 304-02-278
Mfr. Part No.:: SI9945BDY-T1-GE3
Manufacturer:: Vishay

Si9945BDY, Dual N-Channel 60V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Typical Gate Charge @ Vgs	13 nC @ 10 V
Transistor Material	Si
Width	4mm
Maximum Operating Temperature	+150 °C
Length	5mm
Number of Elements per Chip	2
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 5.3 A, 60 V, 8-Pin SOIC Vishay SI9945BDY-T1-GE3

FREE delivery for orders over SGD250.00 (ex GST)

Dual N-Channel MOSFET, Vishay Semiconductor

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