onsemi NTK Type P-Channel MOSFET, 6.7 A, 20 V Enhancement, 8-Pin ChipFET NTHS4101PT1G
- RS Stock No.:
- 780-0595
- Mfr. Part No.:
- NTHS4101PT1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD9.31
(exc. GST)
SGD10.15
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,950 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.931 | SGD9.31 |
| 20 - 40 | SGD0.859 | SGD8.59 |
| 50 - 90 | SGD0.799 | SGD7.99 |
| 100 - 190 | SGD0.745 | SGD7.45 |
| 200 + | SGD0.698 | SGD6.98 |
*price indicative
- RS Stock No.:
- 780-0595
- Mfr. Part No.:
- NTHS4101PT1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.7A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | ChipFET | |
| Series | NTK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.7A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type ChipFET | ||
Series NTK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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