N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

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Price Each

SGD10.19

(exc. GST)

SGD11.11

(inc. GST)

811 In stock for delivery within 4 working days*

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Units	Per unit
1 - 9	SGD10.19
10 - 49	SGD9.98
50 - 99	SGD9.69
100 - 249	SGD9.39
250 +	SGD9.11

RS Stock No.:: 754-5434
Mfr. Part No.:: IPB107N20N3GATMA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	88 A
Maximum Drain Source Voltage	200 V
Series	OptiMOS™
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	9.45mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Length	10.31mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Height	4.57mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 88 A, 200 V, 3-Pin D2PAK Infineon IPB107N20N3GATMA1

Infineon OptiMOS™3 Power MOSFETs, 100V and over

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