Infineon OptiMOS 3 Type N-Channel MOSFET, 21 A, 150 V Enhancement, 8-Pin TDSON BSC520N15NS3GATMA1

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SGD3.49

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SGD3.804

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Per Pack*
2 - 8SGD1.745SGD3.49
10 - 38SGD1.71SGD3.42
40 - 98SGD1.66SGD3.32
100 - 198SGD1.615SGD3.23
200 +SGD1.565SGD3.13

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Packaging Options:
RS Stock No.:
754-5323
Mfr. Part No.:
BSC520N15NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21A

Maximum Drain Source Voltage Vds

150V

Series

OptiMOS 3

Package Type

TDSON

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

52mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

8.7nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Length

5.35mm

Height

1.1mm

Width

6.1 mm

Standards/Approvals

No

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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