Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1

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10 - 10SGD0.561SGD5.61
20 - 40SGD0.437SGD4.37
50 - 90SGD0.385SGD3.85
100 - 190SGD0.342SGD3.42
200 +SGD0.318SGD3.18

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Packaging Options:
RS Stock No.:
753-2848
Mfr. Part No.:
BSS192PH6327FTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

190mA

Maximum Drain Source Voltage Vds

250V

Package Type

SOT-89

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

4.9nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.1V

Maximum Operating Temperature

150°C

Length

4.5mm

Height

1.5mm

Standards/Approvals

No

Width

2.5 mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A Plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)

· Pb-free lead plating, RoHS compliant

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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