Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2

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Subtotal (1 pack of 25 units)*

SGD12.35

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SGD13.45

(inc. GST)

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Per unit
Per Pack*
25 - 25SGD0.494SGD12.35
50 - 100SGD0.39SGD9.75
125 - 225SGD0.336SGD8.40
250 - 475SGD0.305SGD7.63
500 +SGD0.278SGD6.95

*price indicative

Packaging Options:
RS Stock No.:
753-2838
Mfr. Part No.:
BSS126H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Typical Gate Charge Qg @ Vgs

1.4nC

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Height

1mm

Width

1.3 mm

Distrelec Product Id

304-45-303

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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