N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 Infineon BSP129H6327XTSA1

RS Stock No.:: 753-2800
Mfr. Part No.:: BSP129H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 350 mA, 240 V Depletion, 3-Pin SOT-223 Infineon BSP129H6327XTSA1

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Subtotal (1 pack of 5 units)**

SGD3.61

(exc. GST)

SGD3.94

(inc. GST)

80 In stock for delivery within 5 working days*

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Units	Per unit	Per Pack**
5 - 20	SGD0.722	SGD3.61
25 - 95	SGD0.71	SGD3.55
100 - 245	SGD0.688	SGD3.44
250 - 495	SGD0.672	SGD3.36
500 +	SGD0.658	SGD3.29

**price indicative

RS Stock No.:: 753-2800
Mfr. Part No.:: BSP129H6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS® N-Channel MOSFETs

Infineon SIPMOS® Series MOSFET, 280 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP129H6906XTSA1

This small-signal transistor is an effective solution for devices that require high voltage and surface mount capability. As a depletion mode N-channel MOSFET, it enables efficient operation in various electronic applications. With a maximum drain-source voltage of 240V and a continuous drain current capacity of 280mA, this product is well-suited for automation and automotive applications, making it a dependable choice for managing power in different electronic circuits.

Features & Benefits

• N-channel configuration supports efficient switching operations
• Depletion mode functionality ensures constant current performance
• High voltage ratings provide versatility in applications
• Low gate threshold voltage enhances system compatibility
• Surface mount design allows for space-efficient installations
• AEC-Q101 qualified, suitable for automotive usage

Applications

• Suitable for automotive control systems
• Can be used in power management circuits
• Consumer electronics for enhanced efficiency

How can proper installation be ensured for optimal performance?

Install the MOSFET on the PCB following specified mounting guidelines, ensuring correct thermal management for effective heat dissipation.

What should be considered for thermal management during operation?

Thermal resistance must be monitored, as the operational temperature ranges from -55°C to +150°C, requiring adequate PCB design to facilitate efficient heat conduction.

What type of gate drive is recommended for this product?

A gate voltage within the specified range of ±20V is essential for optimal switching characteristics, ensuring dependable operation across applications.

Can this MOSFET be utilised in high-speed switching applications?

Yes, it is designed to function effectively in high-speed switching scenarios, thanks to specified turn-on and turn-off delay times.

What should be noted regarding gate charge characteristics?

The total gate charge at 5V is approximately 3.8nC, optimising power efficiency during switching without placing excessive load on the driving circuits.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	350 mA
Maximum Drain Source Voltage	240 V
Package Type	SOT-223
Series	SIPMOS®
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	20 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	3.8 nC @ 5 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Length	6.5mm
Width	3.5mm
Minimum Operating Temperature	-55 °C
Height	1.6mm