DiodesZetex Isolated 2 Type P-Channel Small Signal, 2 A, 20 V Enhancement, 6-Pin SOT-26 DMP2240UDM-7
- RS Stock No.:
- 751-4253
- Mfr. Part No.:
- DMP2240UDM-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
SGD12.15
(exc. GST)
SGD13.25
(inc. GST)
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In Stock
- Plus 85,300 unit(s) shipping from 29 December 2025
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 100 | SGD0.486 | SGD12.15 |
| 125 - 475 | SGD0.483 | SGD12.08 |
| 500 - 1225 | SGD0.471 | SGD11.78 |
| 1250 - 2475 | SGD0.444 | SGD11.10 |
| 2500 + | SGD0.393 | SGD9.83 |
*price indicative
- RS Stock No.:
- 751-4253
- Mfr. Part No.:
- DMP2240UDM-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-26 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 240mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 600mW | |
| Minimum Operating Temperature | 150°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -0.9V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -65°C | |
| Height | 1.3mm | |
| Length | 3.1mm | |
| Width | 1.7 mm | |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-26 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 240mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 600mW | ||
Minimum Operating Temperature 150°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -0.9V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -65°C | ||
Height 1.3mm | ||
Length 3.1mm | ||
Width 1.7 mm | ||
Standards/Approvals AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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