onsemi Isolated 2 Type N-Channel Small Signal, 280 mA, 20 V Enhancement, 6-Pin SOT-963 NTUD3170NZT5G
- RS Stock No.:
- 780-4792
- Mfr. Part No.:
- NTUD3170NZT5G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 tape of 25 units)*
SGD11.675
(exc. GST)
SGD12.725
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 7,375 unit(s), ready to ship from another location
Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 50 | SGD0.467 | SGD11.68 |
| 75 - 100 | SGD0.449 | SGD11.23 |
| 125 + | SGD0.421 | SGD10.53 |
*price indicative
- RS Stock No.:
- 780-4792
- Mfr. Part No.:
- NTUD3170NZT5G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Small Signal | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-963 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Maximum Power Dissipation Pd | 200mW | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Standards/Approvals | No | |
| Width | 0.85 mm | |
| Length | 1.05mm | |
| Height | 0.4mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Small Signal | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-963 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Maximum Power Dissipation Pd 200mW | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Standards/Approvals No | ||
Width 0.85 mm | ||
Length 1.05mm | ||
Height 0.4mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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