Vishay Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- RS Stock No.:
- 710-5060
- Mfr. Part No.:
- SUM110P06-07L-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD26.51
(exc. GST)
SGD28.895
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- 10 left, ready to ship from another location
- Plus 695 left, shipping from 06 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 35 | SGD5.302 | SGD26.51 |
| 40 - 195 | SGD5.144 | SGD25.72 |
| 200 - 395 | SGD4.99 | SGD24.95 |
| 400 + | SGD4.842 | SGD24.21 |
*price indicative
- RS Stock No.:
- 710-5060
- Mfr. Part No.:
- SUM110P06-07L-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0088Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.414 mm | |
| Height | 4.83mm | |
| Length | 15.875mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0088Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Width 10.414 mm | ||
Height 4.83mm | ||
Length 15.875mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
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