Vishay SUM110P06-08L Type P-Channel MOSFET, 110 A, 60 V Enhancement, 3-Pin TO-263 SUM110P06-08L-E3
- RS Stock No.:
- 710-5014
- Mfr. Part No.:
- SUM110P06-08L-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD24.65
(exc. GST)
SGD26.85
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 10 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 35 | SGD4.93 | SGD24.65 |
| 40 - 195 | SGD4.782 | SGD23.91 |
| 200 - 395 | SGD4.64 | SGD23.20 |
| 400 + | SGD4.50 | SGD22.50 |
*price indicative
- RS Stock No.:
- 710-5014
- Mfr. Part No.:
- SUM110P06-08L-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 110A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SUM110P06-08L | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.5V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.75W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Width | 9.65 mm | |
| Height | 4.83mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 110A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SUM110P06-08L | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.5V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.75W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Width 9.65 mm | ||
Height 4.83mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay SUM110P06-08L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM110P06-07L-E3
- Vishay Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263
- Vishay Type P-Channel Power MOSFET 80 V, 3-Pin TO-263 SUM110P08-11L-E3
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Vishay SUM55P06-19L Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 SUM55P06-19L-E3
- Vishay Type P-Channel MOSFET 100 V, 3-Pin TO-263