Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

RS Stock No.:: 710-3345
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Bulk discount available

Price Each (In a Pack of 5)

SGD2.278

(exc. GST)

SGD2.483

(inc. GST)

15 In stock for delivery within 5 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Pack**
5 - 20	SGD2.278	SGD11.39
25 - 70	SGD2.22	SGD11.10
75 +	SGD2.054	SGD10.27

**price indicative

RS Stock No.:: 710-3345
Mfr. Part No.:: SI4559ADY-T1-GE3
Manufacturer:: Vishay

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	3.9 A, 5.3 A
Maximum Drain Source Voltage	60 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	72 mΩ, 150 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	3.1 W, 3.4 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, +20 V
Length	5mm
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	2
Width	4mm
Typical Gate Charge @ Vgs	13 nC @ 30 V, 14.5 nC @ 30 V
Transistor Material	Si
Height	1.5mm
Minimum Operating Temperature	-55 °C

Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

Dual N/P-Channel MOSFET, Vishay Semiconductor

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