Vishay TrenchFET N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3

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Subtotal (1 pack of 5 units)*

SGD5.56

(exc. GST)

SGD6.06

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD1.112SGD5.56
10 - 15SGD1.076SGD5.38
20 - 35SGD1.04SGD5.20
40 - 70SGD1.012SGD5.06
75 +SGD0.98SGD4.90

*price indicative

Packaging Options:
RS Stock No.:
710-3311
Mfr. Part No.:
SI4128DY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

10.9A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.03Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Gate Source Voltage Vgs

-20V, +20V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

5W

Maximum Operating Temperature

150°C

Length

5mm

Width

4mm

Standards/Approvals

IEC 61249-2-21

Height

1.5mm

Automotive Standard

No

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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