Infineon HEXFET Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-220

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SGD7.32

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SGD7.98

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  • Plus 60 left, shipping from 29 December 2025
  • Plus 24 left, shipping from 18 February 2026
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2 - 8SGD3.66SGD7.32
10 - 38SGD3.585SGD7.17
40 - 98SGD3.475SGD6.95
100 - 198SGD3.37SGD6.74
200 +SGD3.265SGD6.53

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RS Stock No.:
688-6914
Mfr. Part No.:
IRFB3307ZPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

79nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

230W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.66mm

Height

9.02mm

Width

4.82 mm

Automotive Standard

No

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