onsemi BSS138 Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138
- RS Stock No.:
- 671-0324
- Mfr. Part No.:
- BSS138
- Manufacturer:
- onsemi
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View bulk pricing optionSubtotal (1 pack of 10 units)*
SGD1.18
(exc. GST)
SGD1.29
(inc. GST)
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In Stock
- Plus 230 unit(s) shipping from 01 June 2026
- Plus 5,960 unit(s) shipping from 01 June 2026
- Plus 123,490 unit(s) shipping from 08 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.118 | SGD1.18 |
| 20 - 40 | SGD0.115 | SGD1.15 |
| 50 - 90 | SGD0.113 | SGD1.13 |
| 100 - 190 | SGD0.111 | SGD1.11 |
| 200 + | SGD0.109 | SGD1.09 |
*price indicative
- RS Stock No.:
- 671-0324
- Mfr. Part No.:
- BSS138
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23 | |
| Series | BSS138 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.93mm | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q101, AEC-Q200, AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23 | ||
Series BSS138 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.93mm | ||
Length 2.92mm | ||
Automotive Standard AEC-Q101, AEC-Q200, AEC-Q100 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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