onsemi BSS N-Channel MOSFET, 220 mA, 50 V, 3-Pin SOT-23-3 BSS138-G
- RS Stock No.:
- 838-663
- Mfr. Part No.:
- BSS138-G
- Manufacturer:
- onsemi
N
This image is representative of the product range
Get a bulk buy discount
Add 500 more to save SGD3.50
View bulk pricing optionsSubtotal (1 tape of 50 units)*
SGD12.25
(exc. GST)
SGD13.35
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 12 April 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* | Saving |
|---|---|---|---|
| 50 - 450 | SGD0.245 | SGD12.25 | - |
| 500 - 2450 | SGD0.238 | SGD11.90 | SGD3.50 |
| 2500 - 4950 | SGD0.23 | SGD11.50 | SGD37.50 |
| 5000 + | SGD0.223 | SGD11.15 | SGD110.00 |
*price indicative
- RS Stock No.:
- 838-663
- Mfr. Part No.:
- BSS138-G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS | |
| Package Type | SOT-23-3 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Maximum Power Dissipation Pd | 0.36W | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS | ||
Package Type SOT-23-3 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Maximum Power Dissipation Pd 0.36W | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Width 1.3mm | ||
Height 1mm | ||
Automotive Standard No | ||
The onsemi N-Channel enhancement mode field effect transistor is designed for efficient performance in low voltage applications. It delivers reliable switching capabilities and minimal on-state resistance for a variety of electronic uses.
Supports a continuous drain current of 0.22 A and a pulsed drain current of 0.88 A
Exhibits a low on-resistance of 3.5 Ω at gate voltage of 10 V
Operates effectively within a temperature range of -55°C to +150°C
Related links
- onsemi BSS138 N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138
- onsemi BSS138K N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138K
- DiodesZetex BSS138 N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23
- DiodesZetex BSS138 N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23 BSS138-7-F
- DiodesZetex 2N7002 N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 2N7002A-7
- ROHM RUC N-Channel MOSFET 50 V, 3-Pin SOT-23 RUC002N05HZGT116
- ROHM RUC N-Channel MOSFET 50 V, 3-Pin SOT-23
- onsemi BSS138L N-Channel MOSFET 50 V Enhancement, 3-Pin SOT-23