DiodesZetex ZXMN6A07Z Type N-Channel MOSFET, 2.5 A, 60 V Enhancement, 3-Pin SOT-89 ZXMN6A07ZTA
- RS Stock No.:
- 669-7691
- Mfr. Part No.:
- ZXMN6A07ZTA
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD6.89
(exc. GST)
SGD7.51
(inc. GST)
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In Stock
- 220 unit(s) ready to ship from another location
- Plus 1,560 unit(s) shipping from 08 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.689 | SGD6.89 |
| 20 - 40 | SGD0.655 | SGD6.55 |
| 50 - 90 | SGD0.622 | SGD6.22 |
| 100 - 190 | SGD0.591 | SGD5.91 |
| 200 + | SGD0.562 | SGD5.62 |
*price indicative
- RS Stock No.:
- 669-7691
- Mfr. Part No.:
- ZXMN6A07ZTA
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | ZXMN6A07Z | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 3.2nC | |
| Maximum Power Dissipation Pd | 2.6W | |
| Forward Voltage Vf | 0.95V | |
| Width | 2.6 mm | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series ZXMN6A07Z | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 3.2nC | ||
Maximum Power Dissipation Pd 2.6W | ||
Forward Voltage Vf 0.95V | ||
Width 2.6 mm | ||
Length 4.6mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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