DiodesZetex Type N-Channel MOSFET, 320 mA, 100 V Enhancement, 3-Pin E-Line ZVN2110ASTZ
- RS Stock No.:
- 669-7603
- Mfr. Part No.:
- ZVN2110ASTZ
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD8.79
(exc. GST)
SGD9.58
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 20 unit(s) shipping from 05 January 2026
- Plus 1,230 unit(s) shipping from 12 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD0.879 | SGD8.79 |
| 20 - 40 | SGD0.862 | SGD8.62 |
| 50 - 90 | SGD0.844 | SGD8.44 |
| 100 - 490 | SGD0.828 | SGD8.28 |
| 500 + | SGD0.681 | SGD6.81 |
*price indicative
- RS Stock No.:
- 669-7603
- Mfr. Part No.:
- ZVN2110ASTZ
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 320mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Width | 2.41 mm | |
| Length | 4.77mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 320mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Width 2.41 mm | ||
Length 4.77mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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