DiodesZetex Type P-Channel MOSFET, 230 mA, 100 V Enhancement, 3-Pin E-Line ZVP2110A
- RS Stock No.:
- 157-4580
- Mfr. Part No.:
- ZVP2110A
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD7.74
(exc. GST)
SGD8.435
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 370 unit(s) shipping from 29 December 2025
- Plus 1,105 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.548 | SGD7.74 |
| 25 - 95 | SGD1.488 | SGD7.44 |
| 100 - 245 | SGD1.36 | SGD6.80 |
| 250 - 495 | SGD1.31 | SGD6.55 |
| 500 + | SGD1.226 | SGD6.13 |
*price indicative
- RS Stock No.:
- 157-4580
- Mfr. Part No.:
- ZVP2110A
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 230mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Length | 4.77mm | |
| Width | 2.41 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 230mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Length 4.77mm | ||
Width 2.41 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101, AEC-Q104, AEC-Q100, AEC-Q200 | ||
P-Channel MOSFET, 100V to 450V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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