DiodesZetex Type P-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin E-Line ZVP2106A
- RS Stock No.:
- 669-7596
- Mfr. Part No.:
- ZVP2106A
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD10.83
(exc. GST)
SGD11.80
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 210 unit(s) shipping from 29 December 2025
- Plus 14,960 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | SGD1.083 | SGD10.83 |
| 20 - 40 | SGD1.061 | SGD10.61 |
| 50 - 90 | SGD1.039 | SGD10.39 |
| 100 - 190 | SGD1.019 | SGD10.19 |
| 200 + | SGD0.999 | SGD9.99 |
*price indicative
- RS Stock No.:
- 669-7596
- Mfr. Part No.:
- ZVP2106A
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 280mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 700mW | |
| Typical Gate Charge Qg @ Vgs | 2.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Length | 4.77mm | |
| Width | 2.41 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 280mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 700mW | ||
Typical Gate Charge Qg @ Vgs 2.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Length 4.77mm | ||
Width 2.41 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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