Vishay IRF840A Type N-Channel Power MOSFET, 8 A, 500 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 542-9440
- Distrelec Article No.:
- 304-23-891
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
SGD3.48
(exc. GST)
SGD3.79
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1 unit(s) ready to ship
- Plus 741 unit(s) ready to ship from another location
- Plus 3,261 unit(s) shipping from 29 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 2 | SGD3.48 |
| 3 - 4 | SGD3.35 |
| 5 + | SGD3.15 |
*price indicative
- RS Stock No.:
- 542-9440
- Distrelec Article No.:
- 304-23-891
- Mfr. Part No.:
- IRF840APBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220AB | |
| Series | IRF840A | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 850mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 38nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 2V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220AB | ||
Series IRF840A | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 850mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 38nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 2V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Length 10.41mm | ||
Automotive Standard No | ||
Vishay IRF840A Series Power MOSFET, 500V Drain-Source Voltage, 8A Continuous Drain Current - IRF840APBF
This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion tasks in industrial and electronic systems. It operates across a wide temperature span and is packaged for through-hole mounting to support conventional PCB assembly and heatsinking approaches.
Features and Benefits:
• 500V drain-source rating enables high-voltage switching applications • 8A continuous drain current supports moderate load handling • 850mΩ Rds(on) reduces conduction losses in low-current designs • 125W power dissipation allows substantial thermal headroom • 38nC typical gate charge yields predictable switching behaviour • 30V gate-source limit ensures compatibility with common gate drivers
Applications
• Suitable for high-voltage power supply design and conversion tasks • Ideal for switching stages in automation control equipment • Used for motor drive front ends requiring through-hole components • Can be used for industrial inverter and converter prototypes • Used with discrete power boards requiring TO-220 mounting
What operating temperatures can I expect for reliable use?
The device is rated to operate from -55°C up to a maximum of 150°C, supporting harsh ambient conditions and elevated junction temperatures with appropriate thermal management.
What packaging considerations affect cooling and mounting?
The through-hole TO-220AB package with three pins permits direct attachment to heatsinks or chassis plates, facilitating conduction cooling and straightforward soldering onto traditional boards.
How does the gate charge influence driver selection?
With a typical gate charge of 38nC at specified gate drive, you should choose a gate driver capable of delivering sufficient Peak current to achieve the desired switching speed without excessive drive losses.
What voltage and current limits must designs respect?
Continuous drain current should be kept at or below 8A, and drain-source voltage must not exceed 500V to avoid device overstress.
Are there material or regulatory constraints to consider?
The component is supplied in a RoHS-compliant form, indicating adherence to standard restrictions on certain hazardous substances.
Related links
- Vishay IRF840A Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF840APBF
- Vishay IRF840LC Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF840LC Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF840LCPBF
- Vishay IRF840AS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 IRF840ASPBF
- Vishay Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840HPBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF840S Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263 IRF840SPBF
- Vishay IRF840AS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263