Vishay IRF Type N-Channel MOSFET, 2.5 A, 500 V Enhancement, 3-Pin TO-220 IRF820PBF
- RS Stock No.:
- 178-0851
- Mfr. Part No.:
- IRF820PBF
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD49.45
(exc. GST)
SGD53.90
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 1,250 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD0.989 | SGD49.45 |
| 150 - 200 | SGD0.952 | SGD47.60 |
| 250 + | SGD0.893 | SGD44.65 |
*price indicative
- RS Stock No.:
- 178-0851
- Mfr. Part No.:
- IRF820PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-220 | |
| Series | IRF | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.7 mm | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-220 | ||
Series IRF | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Width 4.7 mm | ||
Height 9.01mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
Dynamic dV/dt rating
Repetitive avalanche rated
Simple drive requirements
Related links
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220 IRF820APBF
- Vishay IRF Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220AB IRF840PBF
- Vishay IRF Type N-Channel MOSFET 400 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Vishay IRF Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220