Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 SPW20N60S5FKSA1

RS Stock No.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Manufacturer:: Infineon

Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 SPW20N60S5FKSA1

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RS Stock No.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Manufacturer:: Infineon

Infineon CoolMOS™S5 Power MOSFET Family

Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1

This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.

Features & Benefits

• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control

Applications

• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems

What are the thermal resistance characteristics for this component?

The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.

Is it suitable for use in harsh environments?

Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.

What is the maximum gate-to-source voltage that can be applied?

The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.

Can it handle repetitive avalanche currents?

Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	600 V
Package Type	TO-247
Series	CoolMOS S5
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	208 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Width	5.3mm
Typical Gate Charge @ Vgs	79 nC @ 10 V
Length	15.9mm
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1.2V
Minimum Operating Temperature	-55 °C
Height	20.95mm