STMicroelectronics MASTERG Type P, Type N-Channel MOSFET, 6.5 A, 650 V Enhancement, 31-Pin QFN-9 MASTERGAN4LTR
- RS Stock No.:
- 287-7042
- Mfr. Part No.:
- MASTERGAN4LTR
- Manufacturer:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 287-7042
- Mfr. Part No.:
- MASTERGAN4LTR
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | QFN-9 | |
| Series | MASTERG | |
| Mount Type | Surface | |
| Pin Count | 31 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 1.5nC | |
| Maximum Power Dissipation Pd | 40mW | |
| Maximum Operating Temperature | 125°C | |
| Width | 9mm | |
| Standards/Approvals | RoHS, ECOPACK | |
| Length | 9mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type QFN-9 | ||
Series MASTERG | ||
Mount Type Surface | ||
Pin Count 31 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 1.5nC | ||
Maximum Power Dissipation Pd 40mW | ||
Maximum Operating Temperature 125°C | ||
Width 9mm | ||
Standards/Approvals RoHS, ECOPACK | ||
Length 9mm | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The STMicroelectronics Microcontroller is an advanced power system in package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 225 mΩ, 650 V drain‑source blocking voltage, while the high side of the embedded gate driver can be easily supplied by the integrated bootstrap diode.
Zero reverse recovery loss
UVLO protection on VCC
Internal bootstrap diode
Interlocking function
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