Vishay SISH Type P-Channel MOSFET, 54 A, 30 V Enhancement, 8-Pin 1212-8 SISH103DN-T1-GE3

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 10 units)*

SGD11.27

(exc. GST)

SGD12.28

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • 5,990 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
10 - 40SGD1.127SGD11.27
50 - 90SGD0.826SGD8.26
100 - 240SGD0.733SGD7.33
250 - 990SGD0.717SGD7.17
1000 +SGD0.705SGD7.05

*price indicative

Packaging Options:
RS Stock No.:
279-9981
Mfr. Part No.:
SISH103DN-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

54A

Maximum Drain Source Voltage Vds

30V

Series

SISH

Package Type

1212-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0089Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

72nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

41.6W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

3.3mm

Automotive Standard

No

The Vishay MOSFET is a P-Channel MOSFET and the transistor in it is made up of material known as silicon.

TrenchFET power MOSFET

100 percent Rg and UIS tested

Fully lead (Pb)-free device

Related links