Vishay SIHH Type N-Channel MOSFET, 18 A, 600 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH155N60EF-T1GE3

This image is representative of the product range

Bulk discount available
View bulk pricing options

Subtotal (1 unit)*

SGD7.95

(exc. GST)

SGD8.67

(inc. GST)

Add to Basket
Select or type quantity
In Stock
  • Plus 3,000 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
1 - 49SGD7.95
50 - 99SGD7.79
100 - 249SGD7.72
250 - 999SGD7.56
1000 +SGD7.40

*price indicative

Packaging Options:
RS Stock No.:
279-9916
Mfr. Part No.:
SIHH155N60EF-T1GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

600V

Series

SIHH

Package Type

PowerPAK 8 x 8

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

0.159Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

38nC

Maximum Power Dissipation Pd

156W

Maximum Operating Temperature

150°C

Length

8mm

Standards/Approvals

RoHS

Automotive Standard

No

Vishay SIHH Series MOSFET, 600V Drain Source Voltage, 18A Continuous Drain Current - SIHH155N60EF-T1GE3


This MOSFET is a high-voltage N-channel switching transistor designed for surface-mount power applications in industrial systems. It operates as an enhancement-mode device for switching and amplification tasks where elevated drain-source voltage capability and moderate current handling are required. The component is supplied in a Compact PowerPAK package suited to dense assemblies and thermal-management considerations.

Features and Benefits:


• 600V drain-source rating enables high-voltage switching
• 18A continuous drain current supports substantial load currents
• 0.159Ω Rds(on) reduces conduction losses under load
• 156W power dissipation allows high-power operation
• 38nC typical gate charge ensures predictable drive requirements
• 150°C maximum operating temperature tolerates elevated junction loads

Applications


• Suitable for high-voltage motor-drive switching stages
• Ideal for SMPS primary-side switching in industrial supplies
• Used for AC-DC conversion in power-management modules
• Can be used for inductive-load switching in automation equipment

What are the thermal limits when designing heat-sinking?


The device permits a maximum operating temperature of 150°C and a total power dissipation of 156W

thermal layout should account for package thermal resistance and ensure adequate PCB copper or heatsinking to maintain junction temperature within limits.

What gate drive considerations are required for fast switching?


Typical gate charge is 38nC at the specified gate drive

choose a driver capable of delivering the required charge within the desired switching time while respecting the maximum gate-source voltage of 30V.

How does the device behave under low-temperature extremes?


It is specified for operation down to -55°C, so materials and soldering processes must accommodate thermal cycling across that range.

Are there mounting or pin-count considerations for PCB layout?


The component is a surface-mount PowerPAK with four pins

PCB footprint and thermal vias should be designed to match the package for electrical and thermal performance.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy