Vishay EF Type N-Channel MOSFET, 23 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

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Subtotal (1 reel of 3000 units)*

SGD15,813.00

(exc. GST)

SGD17,235.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 +SGD5.271SGD15,813.00

*price indicative

RS Stock No.:
200-6809
Mfr. Part No.:
SIHH125N60EF-T1GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 8 x 8

Series

EF

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

156W

Typical Gate Charge Qg @ Vgs

47nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

8.1mm

Width

1.05 mm

Length

8.1mm

Automotive Standard

No

The Vishay SIHH125N60EF-T1GE3 is a EF series power MOSFET with fast body diode.

4th generation E series technology

Low figure-of-merit

Low effective capacitance

Reduced switching and conduction losses

Avalanche energy rated (UIS)

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