Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1

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Bulk discount available

Subtotal (1 reel of 2500 units)*

SGD1,025.00

(exc. GST)

SGD1,125.00

(inc. GST)

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Units
Per unit
Per Reel*
2500 - 5000SGD0.41SGD1,025.00
7500 - 10000SGD0.395SGD987.50
12500 +SGD0.37SGD925.00

*price indicative

RS Stock No.:
273-3009
Mfr. Part No.:
IPD60R1K0PFD7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

600V

Series

OptiMOS

Package Type

PG-TO252-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

26W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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