Infineon CoolMOS CPA Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin PG-TO263-3-2 IPB60R099CPAATMA1
- RS Stock No.:
- 273-2773
- Mfr. Part No.:
- IPB60R099CPAATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 1000 units)*
SGD5,828.00
(exc. GST)
SGD6,353.00
(inc. GST)
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- Shipping from 05 May 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | SGD5.828 | SGD5,828.00 |
| 2000 - 3000 | SGD5.634 | SGD5,634.00 |
| 4000 + | SGD5.258 | SGD5,258.00 |
*price indicative
- RS Stock No.:
- 273-2773
- Mfr. Part No.:
- IPB60R099CPAATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS CPA | |
| Package Type | PG-TO263-3-2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.105Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Maximum Power Dissipation Pd | 255W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 40mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 40 mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS CPA | ||
Package Type PG-TO263-3-2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.105Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Maximum Power Dissipation Pd 255W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 40mm | ||
Standards/Approvals RoHS Compliant | ||
Width 40 mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon MOSFET is a CoolMOS power transistor. This MOSFET has high peak current capability with worldwide best Rds. This CoolMOS is specially designed for DC to DC converters for automotive applications.
RoHS compliant
Ultra low gate charge
High peak current capability
Automotive AEC Q101 qualified
Related links
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- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO263-3 IPB65R115CFD7AATMA1
