Infineon OptiMOS 5 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 8-Pin TDSON BSC010N04LSATMA1
- RS Stock No.:
- 273-2625
- Mfr. Part No.:
- BSC010N04LSATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
SGD5,685.00
(exc. GST)
SGD6,195.00
(inc. GST)
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- Shipping from 29 April 2026
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Units | Per unit | Per Reel* |
|---|---|---|
| 5000 - 10000 | SGD1.137 | SGD5,685.00 |
| 15000 - 20000 | SGD1.094 | SGD5,470.00 |
| 25000 + | SGD1.026 | SGD5,130.00 |
*price indicative
- RS Stock No.:
- 273-2625
- Mfr. Part No.:
- BSC010N04LSATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 95nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 139W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.1mm | |
| Height | 1.1mm | |
| Width | 5.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 95nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 139W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.1mm | ||
Height 1.1mm | ||
Width 5.35 mm | ||
Automotive Standard No | ||
The Infineon Power MOSFET is a N channel 40 V power MOSFET. This MOSFET optimized for synchronous rectification and it has higher solder joint reliability due to enlarged source interconnection. It is a qualified according to JEDEC for target applications.
Halogen free
RoHS compliant
Pb free lead plating
Very low on resistance
Superior thermal resistance
Related links
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