Vishay SQ N-Channel MOSFET, 7 A, 60 V Enhancement, 6-Pin TSOP-6 SQ3426CEV-T1_GE3
- RS Stock No.:
- 268-8351
- Mfr. Part No.:
- SQ3426CEV-T1_GE3
- Manufacturer:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
SGD17.38
(exc. GST)
SGD18.95
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- 2,925 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD0.695 | SGD17.38 |
| 50 - 75 | SGD0.675 | SGD16.88 |
| 100 - 225 | SGD0.634 | SGD15.85 |
| 250 - 975 | SGD0.577 | SGD14.43 |
| 1000 + | SGD0.508 | SGD12.70 |
*price indicative
- RS Stock No.:
- 268-8351
- Mfr. Part No.:
- SQ3426CEV-T1_GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ | |
| Package Type | TSOP-6 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 0.092Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 5W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.77V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.05mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ | ||
Package Type TSOP-6 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 0.092Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 5W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.77V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 3.05mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
The Vishay automotive N channel TrenchFET power MOSFET is lead Pb and halogen free device with single configuration MOSFET and surface mount type device. It is independent of operating temperature.
AEC Q101 qualified
ROHS compliant
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