Vishay SQ3583CEV N channel, P-Channel MOSFET, 4.7 A, 20 V Enhancement, 6-Pin TSOP-6 SQ3583CEV-T1_GE3

N
Bulk discount available
View bulk pricing option

Subtotal (1 tape of 1 unit)*

SGD0.73

(exc. GST)

SGD0.80

(inc. GST)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 01 December 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Tape(s)
Per Tape
1 - 24SGD0.73
25 - 99SGD0.49
100 +SGD0.24

*price indicative

RS Stock No.:
736-343
Mfr. Part No.:
SQ3583CEV-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel, P-Channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

20V

Package Type

TSOP-6

Series

SQ3583CEV

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.077Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

12V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

1.67W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
DE
The Vishay Dual MOSFET designed for high-reliability applications. This component utilizes TrenchFET technology to provide efficient power management in a Compact TSOP-6 package.

Qualified for automotive use according to AEC-Q101 standards

Undergoes 100 % Rg and UIS testing to ensure robust performance

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy