Vishay SIHP Type N-Channel MOSFET, 34 A, 650 V Enhancement, 3-Pin TO-220AB SIHP085N60EF-GE3
- RS Stock No.:
- 268-8318
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Manufacturer:
- Vishay
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD9.36 | SGD18.72 |
| 10 - 18 | SGD8.42 | SGD16.84 |
| 20 - 98 | SGD8.25 | SGD16.50 |
| 100 - 498 | SGD6.885 | SGD13.77 |
| 500 + | SGD5.87 | SGD11.74 |
*price indicative
- RS Stock No.:
- 268-8318
- Mfr. Part No.:
- SIHP085N60EF-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 34A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220AB | |
| Series | SIHP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.084Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 184W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 34A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220AB | ||
Series SIHP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.084Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 184W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIHP Series MOSFET, 650V Maximum Drain Source Voltage, 34A Maximum Continuous Drain Current - SIHP085N60EF-GE3
This MOSFET is a high‑voltage N‑channel transistor designed for power switching in industrial and electronic systems. It operates across a wide temperature range and is supplied in a through‑hole TO‑220AB package for straightforward mounting and thermal management. The device is suited to applications requiring controlled high‑voltage switching and substantial continuous current handling.
Features and Benefits:
• 650V rating enables high‑voltage switching applications • 34A continuous drain current supports heavy‑load operation • 0.084Ω on‑resistance reduces conduction losses • 184W power dissipation allows elevated power handling • 63nC typical gate charge permits predictable drive requirements • 150°C maximum junction temperature sustains high‑temperature operation
Applications
• Suitable for industrial motor drive switching stages • Ideal for switch‑mode power supply high‑voltage switches • Used for power conversion in automation control systems • Can be used for inverter front‑end switching modules • Suitable for laboratory test rigs requiring through‑hole mounting
What gate drive considerations should I account for?
With a typical gate charge of 63nC at Vgs, ensure the gate driver can source and sink sufficient current to achieve the required switching speed while controlling EMI.
How does the package influence thermal design?
The TO‑220AB through‑hole format enables easy attachment to a heatsink and a straightforward thermal path for managing up to 184W dissipation under proper heatsinking conditions.
What operating environment range does it tolerate?
The device functions from -55°C up to a maximum operating temperature of 150°C, permitting use in both cold‑start and elevated‑temperature installations.
How should I protect the device from overvoltage events?
Since the transistor has a maximum drain‑source voltage of 650V and a gate limit of 30V, include appropriate snubbers, clamp diodes or transient suppressors and ensure gate drive never exceeds the gate‑source limit.
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