Renesas Electronics NP100P06PDG Type P-Channel MOSFET, 100 A, 60 V P, 4-Pin MP-25ZP (TO-263) NP100P06PDG-E1-AY
- RS Stock No.:
- 264-1239
- Mfr. Part No.:
- NP100P06PDG-E1-AY
- Manufacturer:
- Renesas Electronics
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Subtotal (1 pack of 2 units)*
SGD16.52
(exc. GST)
SGD18.00
(inc. GST)
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In Stock
- 106 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | SGD8.26 | SGD16.52 |
| 10 - 48 | SGD7.445 | SGD14.89 |
| 50 - 98 | SGD7.30 | SGD14.60 |
| 100 - 248 | SGD6.095 | SGD12.19 |
| 250 + | SGD5.965 | SGD11.93 |
*price indicative
- RS Stock No.:
- 264-1239
- Mfr. Part No.:
- NP100P06PDG-E1-AY
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NP100P06PDG | |
| Package Type | MP-25ZP (TO-263) | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.1mΩ | |
| Channel Mode | P | |
| Maximum Power Dissipation Pd | 200W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 300nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NP100P06PDG | ||
Package Type MP-25ZP (TO-263) | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.1mΩ | ||
Channel Mode P | ||
Maximum Power Dissipation Pd 200W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 300nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Renesas Electronics provides a low voltage power with P-channel type MOS Field Effect Transistor which is designed for high current switching applications. It consist of a 100 A maximum drain current.
Maximum drain source voltage is 60 V
Mounting type is surface mount
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