Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-263 IRFZ34NSTRLPBF

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Subtotal (1 pack of 10 units)*

SGD11.75

(exc. GST)

SGD12.81

(inc. GST)

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  • 1,080 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10SGD1.175SGD11.75
20 - 40SGD1.152SGD11.52
50 - 90SGD1.045SGD10.45
100 - 240SGD0.939SGD9.39
250 +SGD0.92SGD9.20

*price indicative

Packaging Options:
RS Stock No.:
262-6784
Mfr. Part No.:
IRFZ34NSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.075Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Standards/Approvals

No

Distrelec Product Id

304-41-681

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. This design has features such as 175°C operating temperature, fast switching speed.

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