Infineon HEXFET Type N-Channel MOSFET, 26 A, 200 V Enhancement, 3-Pin TO-220 IRFI4227PBF
- RS Stock No.:
- 262-6757
- Mfr. Part No.:
- IRFI4227PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
SGD9.13
(exc. GST)
SGD9.952
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
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- Shipping from 03 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 48 | SGD4.565 | SGD9.13 |
| 50 - 98 | SGD3.55 | SGD7.10 |
| 100 - 248 | SGD3.19 | SGD6.38 |
| 250 - 998 | SGD3.125 | SGD6.25 |
| 1000 + | SGD2.91 | SGD5.82 |
*price indicative
- RS Stock No.:
- 262-6757
- Mfr. Part No.:
- IRFI4227PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.036Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-41-674 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.036Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-41-674 | ||
The Infineon power MOSFET is specifically designed for sustain energy recovery and pass switch applications in plasma display panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
150 degree Celsius operating junction temperature
High repetitive peak current capability
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