Infineon IPD Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-252 IPD038N06NF2SATMA1

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Subtotal (1 pack of 10 units)*

SGD11.78

(exc. GST)

SGD12.84

(inc. GST)

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  • 4,000 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 40SGD1.178SGD11.78
50 - 90SGD0.924SGD9.24
100 - 240SGD0.743SGD7.43
250 - 990SGD0.729SGD7.29
1000 +SGD0.621SGD6.21

*price indicative

Packaging Options:
RS Stock No.:
262-5867
Mfr. Part No.:
IPD038N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252

Series

IPD

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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