Infineon iPB Type N-Channel MOSFET, 195 A, 60 V Enhancement, 3-Pin TO-263 IPB015N06NF2SATMA1

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Subtotal (1 pack of 2 units)*

SGD7.70

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SGD8.40

(inc. GST)

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Per unit
Per Pack*
2 - 8SGD3.85SGD7.70
10 - 48SGD3.32SGD6.64
50 - 98SGD2.605SGD5.21
100 - 248SGD2.095SGD4.19
250 +SGD2.055SGD4.11

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Packaging Options:
RS Stock No.:
262-5852
Mfr. Part No.:
IPB015N06NF2SATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-263

Series

iPB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.15mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

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