Infineon iPB Type N-Channel MOSFET, 191 A, 40 V Enhancement, 3-Pin TO-263 IPB014N04NF2SATMA1
- RS Stock No.:
- 262-5850
- Mfr. Part No.:
- IPB014N04NF2SATMA1
- Manufacturer:
- Infineon
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 5 units)*
SGD16.48
(exc. GST)
SGD17.965
(inc. GST)
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In Stock
- 790 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.296 | SGD16.48 |
| 25 - 45 | SGD2.228 | SGD11.14 |
| 50 - 95 | SGD2.184 | SGD10.92 |
| 100 - 245 | SGD1.792 | SGD8.96 |
| 250 + | SGD1.756 | SGD8.78 |
*price indicative
- RS Stock No.:
- 262-5850
- Mfr. Part No.:
- IPB014N04NF2SATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 191A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | iPB | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.15mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 191A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series iPB | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.15mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.
Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
Related links
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- Infineon iPB Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263
- Infineon iPB Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263