Infineon iPB Type N-Channel MOSFET, 180 A Enhancement TO-263 IPB180N06S4H1ATMA2

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Subtotal (1 pack of 2 units)*

SGD11.60

(exc. GST)

SGD12.64

(inc. GST)

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In Stock
  • 934 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
2 - 48SGD5.80SGD11.60
50 - 98SGD5.20SGD10.40
100 - 248SGD4.28SGD8.56
250 - 498SGD4.195SGD8.39
500 +SGD3.645SGD7.29

*price indicative

Packaging Options:
RS Stock No.:
260-5120
Mfr. Part No.:
IPB180N06S4H1ATMA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

180A

Series

iPB

Package Type

TO-263

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon N channel optiMOS power MOSFETs provide excellent gate charge. It has highest current capability. This N channel MOSFET transistor operates in enhancement mode.

N channel enhancement mode

MSL1 up to 260°C peak reflow

100% Avalanche tested

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