Infineon IPD Type N-Channel MOSFET, 126 A, 600 V N HDSOP IPDQ60R065S7XTMA1
- RS Stock No.:
- 260-1204
- Mfr. Part No.:
- IPDQ60R065S7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
SGD6.35
(exc. GST)
SGD6.92
(inc. GST)
Add 27 units to get free delivery
In Stock
- 748 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | SGD6.35 |
| 10 - 99 | SGD5.71 |
| 100 - 249 | SGD5.14 |
| 250 - 499 | SGD4.62 |
| 500 + | SGD4.16 |
*price indicative
- RS Stock No.:
- 260-1204
- Mfr. Part No.:
- IPDQ60R065S7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Power Dissipation Pd | 195W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Standards/Approvals | RoHS | |
| Width | 15.1 mm | |
| Length | 15.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Power Dissipation Pd 195W | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Standards/Approvals RoHS | ||
Width 15.1 mm | ||
Length 15.5mm | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
Related links
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R040S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP IPDD60R125G7XTMA1