Infineon IPD Type N-Channel MOSFET, 375 A, 600 V N HDSOP
- RS Stock No.:
- 260-1199
- Mfr. Part No.:
- IPDQ60R022S7XTMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 750 units)*
SGD10,062.00
(exc. GST)
SGD10,967.25
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 750 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 750 - 750 | SGD13.416 | SGD10,062.00 |
| 1500 - 1500 | SGD12.746 | SGD9,559.50 |
| 2250 + | SGD11.471 | SGD8,603.25 |
*price indicative
- RS Stock No.:
- 260-1199
- Mfr. Part No.:
- IPDQ60R022S7XTMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 375A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | HDSOP | |
| Series | IPD | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 0.82V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 416W | |
| Typical Gate Charge Qg @ Vgs | 150nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 375A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type HDSOP | ||
Series IPD | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 0.82V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 416W | ||
Typical Gate Charge Qg @ Vgs 150nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET enables the best price performance for low frequency switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for “static switching” and high current applications. It is an ideal fit for solid state relay and circuit breaker designs as well as for line rectification in SMPS and inverter topologies.
High pulse current capability
Increased system performance
More compact and easier design
Lower BOM or/and TCO over prolonged life time
Shock & vibration resistance
Related links
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R040S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N HDSOP IPDQ60R065S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP
- Infineon IPD Type N-Channel MOSFET 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1
- Infineon IPD Type N-Channel MOSFET 600 V N, 10-Pin HDSOP IPDD60R125G7XTMA1