Infineon IPP N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 IPP65R095C7XKSA1
- RS Stock No.:
- 258-3898
- Mfr. Part No.:
- IPP65R095C7XKSA1
- Manufacturer:
- Infineon
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SGD260.45
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SGD283.90
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Units | Per unit | Per Tube* | Saving |
|---|---|---|---|
| 50 - 50 | SGD5.209 | SGD260.45 | - |
| 100 - 100 | SGD5.119 | SGD255.95 | SGD9.00 |
| 150 - 250 | SGD4.985 | SGD249.25 | SGD33.60 |
| 300 - 550 | SGD4.725 | SGD236.25 | SGD145.20 |
| 600 + | SGD4.232 | SGD211.60 | SGD586.20 |
*price indicative
- RS Stock No.:
- 258-3898
- Mfr. Part No.:
- IPP65R095C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPP | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 128W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPP | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 128W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits offset switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Lowest conduction losses/package
Low switching losses
Better light load efficiency
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