Infineon IPD Type P-Channel MOSFET, 70 A, 30 V N TO-252 IPD068P03L3GATMA1

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Subtotal (1 pack of 5 units)*

SGD4.85

(exc. GST)

SGD5.30

(inc. GST)

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Units
Per unit
Per Pack*
5 - 5SGD0.97SGD4.85
10 - 95SGD0.868SGD4.34
100 - 245SGD0.678SGD3.39
250 - 495SGD0.56SGD2.80
500 +SGD0.454SGD2.27

*price indicative

Packaging Options:
RS Stock No.:
258-3831
Mfr. Part No.:
IPD068P03L3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

70A

Maximum Drain Source Voltage Vds

30V

Series

IPD

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.6mΩ

Channel Mode

N

Forward Voltage Vf

1.2V

Standards/Approvals

No

Automotive Standard

No

The Infineon P-channel enhancement mode field-effect transistor is highly innovative OptiMOS families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.

Enhancement mode

Logic level

Avalanche rated

Fast switching

Dv/dt rated


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