Infineon HEXFET N-Channel MOSFET, 100 A, 40 V TO-252 AUIRFR8403TRL
- RS Stock No.:
- 258-0632
- Mfr. Part No.:
- AUIRFR8403TRL
- Manufacturer:
- Infineon
Bulk discount available
View bulk pricing optionsSubtotal (3000 units, on reels of 3000)*
SGD4,869.00
(exc. GST)
SGD5,307.00
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 28 August 2028
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 - 3000 | SGD1.623 | SGD4,869.00 |
| 6000 - 6000 | SGD1.46 | SGD4,380.00 |
| 9000 + | SGD1.314 | SGD3,942.00 |
*price indicative
- RS Stock No.:
- 258-0632
- Mfr. Part No.:
- AUIRFR8403TRL
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Forward Voltage Vf | 900mV | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 99W | |
| Typical Gate Charge Qg @ Vgs | 66nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Forward Voltage Vf 900mV | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 99W | ||
Typical Gate Charge Qg @ Vgs 66nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon Specifically designed for automotive applications, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in automotive applications and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Related links
- Infineon HEXFET N-Channel MOSFET 40 V TO-252 AUIRFR8403TRL
- Infineon HEXFET N-Channel MOSFET 20 V TO-252
- Infineon HEXFET N-Channel MOSFET 20 V TO-252 IRLR6225TRPBF
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252
- Infineon HEXFET N-Channel MOSFET 100 V TO-252