Infineon HEXFET N-Channel MOSFET, 24 A, 200 V Enhancement TO-263

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Subtotal (25 units, supplied on a continuous strip)*

SGD87.75

(exc. GST)

SGD95.75

(inc. GST)

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  • Plus 330 unit(s) shipping from 05 October 2026
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Units
Per unit
25 - 45SGD3.51
50 - 95SGD3.44
100 - 245SGD2.826
250 +SGD2.768

*price indicative

Packaging Options:
RS Stock No.:
257-9436P
Mfr. Part No.:
IRFS4620TRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-263

Series

HEXFET

Mount Type

Through Hole

Maximum Drain Source Resistance Rds

77.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

144W

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

25nC

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IRFS series is the 200V single n channel HEXFET Power mosfet in a D2 Pak package.

Improved gate, avalanche and dynamic dV/dt ruggedness

Fully characterized capacitance and avalanche SOA

Enhanced body diode dV/dt and dI/dt capability lead free

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