Infineon HEXFET Type N-Channel MOSFET, -6.7 A, -20 V, 8-Pin SO-8 IRF7404TRPBF
- RS Stock No.:
- 257-9310
- Mfr. Part No.:
- IRF7404TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD9.79
(exc. GST)
SGD10.67
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- 4,000 unit(s) shipping from 19 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | SGD0.979 | SGD9.79 |
| 50 - 90 | SGD0.95 | SGD9.50 |
| 100 - 490 | SGD0.912 | SGD9.12 |
| 500 - 1990 | SGD0.868 | SGD8.68 |
| 2000 + | SGD0.816 | SGD8.16 |
*price indicative
- RS Stock No.:
- 257-9310
- Mfr. Part No.:
- IRF7404TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | -6.7A | |
| Maximum Drain Source Voltage Vds | -20V | |
| Package Type | SO-8 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Forward Voltage Vf | -1V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 33.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Distrelec Product Id | 304-40-519 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id -6.7A | ||
Maximum Drain Source Voltage Vds -20V | ||
Package Type SO-8 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Forward Voltage Vf -1V | ||
Maximum Power Dissipation Pd 2.5W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 33.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Distrelec Product Id 304-40-519 | ||
Automotive Standard No | ||
The Infineon IRF series is the strong IRFET power mosfet family is optimized for low RDS (on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness.
Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below 100 kHz
Industry standard surface mount power package
Capable of being wave soldered
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