Infineon HEXFET Type N-Channel MOSFET, 120 A, 40 V TO-252

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Subtotal (1 reel of 2000 units)*

SGD1,140.00

(exc. GST)

SGD1,240.00

(inc. GST)

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  • Shipping from 18 August 2026
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Units
Per unit
Per Reel*
2000 - 2000SGD0.57SGD1,140.00
4000 +SGD0.538SGD1,076.00

*price indicative

RS Stock No.:
257-5548
Mfr. Part No.:
IRFR7446TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Maximum Drain Source Resistance Rds

3.9mΩ

Maximum Power Dissipation Pd

98W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

65nC

Forward Voltage Vf

0.9V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFET improved gate, avalanche and dynamic dV/dt ruggedness and it’s used for OR-ing and redundant power switches and DC/DC and AC/DC converters, DC/AC Inverters.

Fully characterized capacitance and avalanche SOA

Enhanced body diode dv/dt and dI/dt Capability

Lead-Free

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