Vishay Type N-Channel MOSFET, 40 A, 30 V PowerPAK SO-8 SIRA04DP-T1-GE3
- RS Stock No.:
- 256-7427
- Mfr. Part No.:
- SIRA04DP-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD10.07
(exc. GST)
SGD10.975
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 1,870 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | SGD2.014 | SGD10.07 |
| 50 - 95 | SGD1.954 | SGD9.77 |
| 100 - 245 | SGD1.836 | SGD9.18 |
| 250 - 995 | SGD1.67 | SGD8.35 |
| 1000 + | SGD1.468 | SGD7.34 |
*price indicative
- RS Stock No.:
- 256-7427
- Mfr. Part No.:
- SIRA04DP-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8 | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 0.0095Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8 | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 0.0095Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay Semiconductor trans mosfet N-CH 30V 35.9A 8-pin powerPAK SO T, R. Its applications are synchronous rectification, high power density DC, DC and VRMs and embedded DC, DC.
TrenchFET power mosfet
100 % Rg and UIS tested
Low Qg for high efficiency
Related links
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